A 60 ghz power amplifier in 90nm cmos technology pdf

A 60 ghz power amplifier in 90nm cmos technology abstract. The transmitter is capable of delivering 12 dbm of power at the external power amplifier. The pa comprises two cascode stages with inductive load and lowimpedance interstage matching, followed by a commonsource output stage. A 60 ghz transformerbased variablegain power amplifier. Enable lowcost wireless communications over short distance on 60 ghz. This paper reports a threestage fourway power amplifier for 94 ghz image radar systems in 90 nm cmos technology. Evans, a 60ghz fullyintegrated doherty power amplifier based on 0. In order to achieve concurrent operation of the 60 ghz pa in two desired narrow frequency bands, the multifrequency passive coupling matching networks design is proposed. From 10 ghz to 100 ghz by zhiming deng doctor of philosophy in engineering electrical engineering and computer sciences university of california, berkeley professor ali m. Schematics of the designed 60 ghz cmos onchip integrated yagi antenna and balun bandpass filter.

Compared to nm, 90nm technology has 1 db higher msg 12 db lower noise f max 180 ghz compared to 5 ghz in nm. A 60ghz 90nm cmos cascode amplifier with interstage matching abstract. This amplifier can be used as a predriver or as the. Concurrent dualband power amplifier using coupling matching.

Design techniques for highfrequency cmos integrated circuits. Design of a 60 ghz power amplifier utilizing 90nm cmos technology. Nec develops 60ghzband cmos transceiver with worlds. This transceiver incorporates both a transmitter and receiver. Design of a 60 ghz power amplifier utilizing 90nm cmos technology wei wang 1, a, mengjia huang 1, b and yongchun he 1, c chongqing university of post and telecommunications, chongqing 400065,p. The 60 ghz modulator is designed in a 90nm cmos process. Synergy of rf and ic technologies, proceedings, ieee, pp. Balun bandpass filter design the proposed balun bandpass filter is composed of two open loop resonators with coupled sections and. A highgain 60ghz power amplifier with 20dbm output power in 90nm cmos abstract.

The rf power amplifier is one of the most critical blocks of transceivers, as it is expectedlargeto provide a suitable output power with high gain, efficiencyperformance. I also would like to thank him, as well as nanyang technological university, for academic and financial support throughout the whole course of this work. Abstractin this paper, a 60 ghz ltcc sip with lowpower cmos ook modulator and demodulator is presented. A power efficient 60 ghz 90nm cmos ook receiver with an onchip antenna kang, k, dong, pd, brinkhoff, james, heng, ch, lin, f and yuan, x 2009, a power efficient 60 ghz 90nm cmos ook receiver with an onchip antenna, in 2009 ieee international symposium on radiofrequency integration technology. The 60ghz band is suited to highspeed wireless transmissions with bit rates exceeding 2 gigabits per second gbps, and has been adopted as the licensefree band in the u.

The schematic of the 60 ghz cmos power amplifier is presented in fig. Request pdf a 60 ghz transformerbased variablegain power amplifier in 90nm cmos a power amplifier, suitable for shortrange 60 ghz applications, is designed. The input is gain matched while the output is matched to maximize the output. In this paper, a 60ghz power amplifier based on an injection locked structure is demonstrated in a standard 65 cmos technology.

To maximize the advantage of the typical modelocking method in the cascode structure, the input of the crosscoupled transistor is modified from that of a typical modelocking structure. The receiver has 66 db of linear controlled gain with a noise figure of 8 db. Facilitate a fully integrated transceiver on cmos technology. My gratitude is extended to my wife, wang xiaolei and my parents for.

Presented a 60ghz sixport transceiver ic in standardbulk 0. Niknejad department of electrical engineering and computer sciences. A highly stable millimeter wave low noise amplifier in. Balun bandpass filter design the proposed balun bandpass filter is composed of two open loop resonators with coupled sections and three feeding lines 2. Pushing cmos to the limit university of california, berkeley. The pa comprises three cascaded commonsource stages with inductive load and interstage matching.

A 60 ghz 90nm cmos cascode amplifier with interstage matching abstract. A dualmode highly efficient 60ghz power amplifier in 65nm cmos. The power amplifier consists of six 2stage power amplifiers, three 2way wilkinson power splitters for parallel amplification, and three 2way wilkinson power combiners to. The pa comprises a commonsource cs input stage and a cs gain stage with wideband. The channel bandwidth is 1 ghz in order to achieve gigabit ethernet wireless transmission at 1km distance. The input is gain matched while the output is matched to maximize the output power. To ensure a reasonable power gain at 60 ghz, the driver stage and the gain stage were cascaded before the main power stage. A new fullyintegrated concurrent dual band cmos power amplifier pa which covers the first and third channels of ieee 802. A 60 ghz power amplifier in 90nm cmos technology ieee. Cmos circuits and devices beyond 100 ghz by babak heydari b. Cmos 60 ghz power amplifier using simple open drain and. Most of the pas reported in the literature are class a pas in order to reach high power gain values. Design of variable gain amplifier in cmos technology.

The proposed architecture is analyzed and we define the upper limit to adopt proposed method in designing 60 ghz amplifier. A twostage 60 ghz 90 nm cmos pa has been designed and fabricated. Cmos device modeling for millimeterwave power amplifiers. Oct 10, 2007 a 60 ghz 90nm cmos cascode amplifier with interstage matching abstract. A low power, millimeter wave currentreuse cascade amplifier. A power efficient 60 ghz 90nm cmos ook receiver with an on. Concurrent dualband power amplifier using coupling. A 60 ghz power amplifier pa for a directconversion transceiver using standard 90 nm cmos technology is reported. The modulator uses a current reuse technique and only consumes 14. Abstractthis paperpresents a new 60 ghz amplifier design method using tsmc 90 nm cmos technology. We propose a modelocking method optimized for the cascode structure of an rf cmos power amplifier. Niknejad, chair technology developments have made cmos a strong candidate in highfrequency ap.

Conclusion a 60ghz power amplifier with 14 db gain and record fom for cmos pas was implemented in 90nm cmos technology. The design and linearization of 60ghz injection locked power. A singleended low noise amplifier in 65 nm cmos for applications at 60 ghz is presented. Kastritsiou 4, 26504, patras, greece received 6 february 2012. A highvoltage driving 60ghz power amplifier with p. Inductive shuntshunt feedback technique is used at both the. In this paper, the potential of 90nm rfcmos for 60ghz transceiver frontends is explored in the implementation of two critical building blocks the power amplifier, demonstrated here for the first time at 60ghz in cmos, and the lownoise amplifier. A highly stable millimeter wave low noise amplifier in nm. Aug 16, 2012 a 60 ghz power amplifier pa for a directconversion transceiver using standard 90 nm cmos technology is reported. A 65nm cmos 60 ghz class fe power amplifier for wpan.

A fully integrated 60 ghz power amplifier using a standard 90 nm cmos process is presented. This amplifier can be used as a predriver or as the main pa for short range wireless communication. A highvoltage driving 60ghz power amplifier with psat of. A millimeterwave power amplifier pa based on a 65nm cmos technology from stmicroelectronics has been designed. In this paper, a 60 ghz power amplifier based on an injection locked structure is demonstrated in a standard 65 cmos technology. Conclusion a 60 ghz power amplifier with 14 db gain and record fom for cmos pas was implemented in 90nm cmos technology. The lna is a cmos replica of a noise and impedancematched, 2stage cascode sige bicmos lna. A 60 ghz high gain transformercoupled differential power. Design of a 60 ghz power amplifier utilizing 90nm cmos. The amplifier was characterized over process, supply voltage and temperature variation, showing excellent yield and. To prove the feasibility of the proposed structure, we designed a 2. A linear 60 ghz 65 nmcmos power amplifier realization and. Cascode amplifiers followed by a common source cs stage are designed as driver and.

The amplifier uses an interstage matching to increase the gain and to provide a better power match between the commonsource and the commongate transistor of the cascode device. Wband power amplifier with high output power and power. The transmitter and receiver chips were fabricated based on standard 90nm cmos technology and demonstrated a data rate of 2. The design and linearization of 60ghz injection locked.

A dualmode highly efficient 60ghz power amplifier in 65nm. Schematics of the designed 60ghz cmos onchip integrated yagi antenna and balun bandpass filter. Compact highpower 60 ghz power amplifier in 65 nm cmos. Pdf a 60 ghz power amplifier in 90nm cmos technology. Its measured gain and noise figure at the centre frequency of 57 ghz are 19.

The design of a 60 ghz cascode amplifier in a 90 nm technology is described. University of california, berkeley 2006 a dissertation submitted in partial satisfaction of the requirements for the degree of doctor of philosophy in engineering electrical engineering and computer sciences in the. The targeted feature is the unlicensed band around 60 ghz suitable for wireless personal area network application wpan. Most of the pas reported in the literature are classa pas in order to reach high power gain values.